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2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal

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Buy cheap 2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material from wholesalers
  • Buy cheap 2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material from wholesalers
  • Buy cheap 2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material from wholesalers
  • Buy cheap 2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material from wholesalers
  • Buy cheap 2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material from wholesalers
  • Buy cheap 2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material from wholesalers

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

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Brand Name:zmkj
Model Number:GaN-non-polar
Price:by case
Payment Terms:L/C, T/T
Delivery Time:2-4weeks
Company Data
Verified Supplier
Contact Person Wang
Business Type: Manufacturer Agent Importer Exporter Trading Company
Officials: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Quality: Quality Certifitation Available
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Product Details Company Profile
Product Details

2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane)


GaN Wafer Characteristic

ProductGallium nitride (GaN) substrates
Product Description:Saphhire GaN template is presented Epitxial hydride vapor phase epitaxy (HVPE) method. In the HVPE process, the acid produced by the reaction GaCl, which is in turn reacted with ammonia to produce gallium nitride melt. Epitaxial GaN template is a cost-effective way to replace gallium nitride single crystal substrate.
Technical parameters:
Size2 "round; 50mm ± 2mm
Product PositioningC-axis <0001> ± 1.0.
Conductivity typeN-type & P-type
ResistivityR <0.5Ohm-cm
Surface treatment (Ga face)AS Grown
RMS<1nm
Available surface area> 90%
Specifications:

GaN epitaxial film (C Plane), N-type, 2 "* 30 microns, sapphire;

GaN epitaxial film (C Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (R Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (M Plane), N-type, 2 "* 5 microns sapphire.

AL2O3 + GaN film (N-type doped Si); AL2O3 + GaN film (P-type doped Mg)

Note: according to customer demand special plug orientation and size.

Standard Packaging:1000 clean room, 100 clean bag or single box packaging

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

Application

GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.

  • Laser Projection Display, Power Device, etc.
  • Date storage
  • Energy-efficient lighting
  • Full color fla display
  • Laser Projecttions
  • High- Efficiency Electronic devices
  • High- Frequency Microwave Devices
  • High-energy Detection and imagine
  • New energy solor hydrogen technology
  • Environment Detection and biological medicine
  • Light source terahertz band

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

Specifications:


GaN Template specification

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

2~4inch Free-standing GaN Specification file
ItemGaN-FS-C-U-C50GaN-FS-C-N-C50GaN-FS-C-SI-C50
Dimensionse 50.8 mm ± 1 mm
Thickness350 ± 25 pm
Useable Surface Area> 90%
OrientationC-plane (0001) off angle toward M-Axis 0.35° ± 0.15°
Orientation Flat(1-100) ±0.5°, 16.0 ±1.0 mm
Secondary Orientation Flat(11-20) ±3°, 8.0 ±1.0 mm
TTV(Total Thickness Variation)< 15 pm
BOW< 20 pm
Conduction TypeN-typeN-typeSemi-Insulating (Fe-doped)
Resistivity(3O0K)< 0.1 Q・cm< 0.05 Q・cm>106 Q・cm
Dislocation DensityFrom 1x105 cm-2 to 3x106 cm-2
PolishingFront Surface: Ra < 0.2 nm (polished); or < 0.3 nm (polished and surface treatment for epitaxy)
Back Surface: 0.5~1.5 pm; option: 1~3 nm (fine ground); < 0.2 nm (polished)
PackagePackaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.
size4”GaN Substrates
ItemGaN-FS-N
Dimensions sizeФ 100.0mm ± 0.5mm
Thickness of Substrate450 ± 50 µm
Orientation of SubstrateC-axis(0001) toward M-axis 0.55± 0.15°
PolishSSP Or DSP
MethodHVPE
BOW<25UM
TTV<20um
Roughness<0.5nm
resistivity0.05ohm.cm
DopantSi
(002) FWHM&(102) FWHM
<100arc
Quantity and maximum size of holes
and pits
Production grade ≤23@1000 um;Research grade ≤68@1000 um
Dummy grade ≤112@1000 um
Useable areaP level>90%; R level>80%: Dlevel>70%(edge and macro defects exclusion)

Non-Polar Freestanding GaN Substrates(a-plane and m-plane)
ItemGaN-FS-aGaN-FS-m
Dimensions5.0mm×5.5mm
5.0mm×10.0mm
5.0mm×20.0mm
Customized Size
Thickness330 ± 25 µm
Orientationa-plane ± 1°m-plane ± 1°
TTV≤15 µm
BOW≤20 µm
Conduction TypeN-type
Resistivity(300K)< 0.5 Ω·cm
Dislocation DensityLess than 5x106 cm-2
Useable Surface Area> 90%
PolishingFront Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
PackagePackaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

2.ZMKJ provides GaN wafer to microelectronics and optoelectronics industry in diameter 2" to 4".

GaN epitaxial wafers are grown by HVPE or MOCVD method , can be used as an ideal and excellent substrate for high frequency , high speed and high power device . Currently we can offer GaN epitaxial wafer for fundamental research and device product development use, including GaN template , AlGaN

and InGaN . Besides standard GaN based wafer,you are welcome to discuss your epi layer structure .

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

Company Profile

SHANGHAI FAMOUS TRADE CO.,LTD

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
   We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects.
    It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.
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