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Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch

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Buy cheap Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch from wholesalers
  • Buy cheap Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch from wholesalers
  • Buy cheap Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch from wholesalers
  • Buy cheap Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch from wholesalers

Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch

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Brand Name:zmkj
Model Number:GaN-2INCH 10x10mm
Price:by case
Payment Terms:L/C, T/T
Delivery Time:2-4weeks
Company Data
Verified Supplier
Contact Person Wang
Business Type: Manufacturer Agent Importer Exporter Trading Company
Officials: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Quality: Quality Certifitation Available
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Product Details


2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer


  1. III-Nitride(GaN,AlN,InN)

Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is

a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.


Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.
GaN can be used in many areas such as LED display, High-energy Detection and Imaging,

  1. Laser Projection Display, Power Device, etc.
  2. Date storage
  3. Energy-efficient lighting
  4. Full color fla display
  5. Laser Projecttions
  6. High- Efficiency Electronic devices
  7. High- Frequency Microwave Devices
  8. High-energy Detection and imagine
  9. New energy solor hydrogen technology
  10. Environment Detection and biological medicine
  11. Light source terahertz band


Specifications:

Free-standing GaN Substrates (Customized size)
ItemGaN-FS-10GaN-FS-15
Dimensions10.0mm×10.5mm14.0mm×15.0mm
Marco Defect DensityA Level0 cm-2
B Level≤ 2 cm-2
ThicknessRank 300300 ± 25 µm
Rank 350350 ± 25 µm
Rank 400400 ± 25 µm
OrientationC-axis(0001) ± 0.5°
TTV ( Total Thickness Variation)≤15 µm
BOW≤20 µm
Conduction TypeN-typeSemi-Insulating
Resistivity(300K)< 0.5 Ω·cm>106 Ω·cm
Dislocation DensityLess than 5x106 cm-2
Useable Surface Area> 90%
PolishingFront Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
PackagePackaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch

ItemGaN-FS-N-1.5
DimensionsФ 25.4mm ± 0.5mmФ 38.1mm ± 0.5mmФ 40.0mm ± 0.5mmФ 45.0mm ± 0.5mm
Marco Defect DensityA Level≤ 2 cm-2
B Level> 2 cm-2
Thickness300 ± 25 µm
OrientationC-axis(0001) ± 0.5°
Orientation Flat(1-100) ± 0.5°(1-100) ± 0.5°(1-100) ± 0.5°(1-100) ± 0.5°
8 ± 1mm12 ± 1mm14 ± 1mm14 ± 1mm
Secondary Orientation Flat(11-20) ± 3°(11-20) ± 3°(11-20) ± 3°(11-20) ± 3°
4 ± 1mm6 ± 1mm7 ± 1mm7 ± 1mm
TTV(Total Thickness Variation)≤15 µm
BOW≤20 µm
Conduction TypeN-typeSemi-Insulating
Resistivity(300K)< 0.5 Ω·cm>106 Ω·cm
Dislocation DensityLess than 5x106 cm-2
Useable Surface Area> 90%
PolishingFront Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
PackagePackaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch
Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch

Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.

-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.

Q: How to pay?
100%T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-10pcs.
It depends on quantity and technics.

Q: Do you have inspection report for material?
We can supply ROHS report and reach reports for our products.

Company Profile

SHANGHAI FAMOUS TRADE CO.,LTD

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
   We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects.
    It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.
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