High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon Carbide Substrate

SiC Wafer

SiC crystal are cutted into slices, and polishing, the SiC wafer comes. For specification and details, please visit below page.

SiC crystal growth

Bulk crystal growth is the technique for fabrication of single crystalline substrates , making the base for further device processing.To have a breakthrough in SiC technology obviously we need production of SiC substrate with a reproducible process.6H- and 4H- SiC crystals are grown in graphite crucibles at high temperatures up to 2100—2500°C. The operating temperature in the crucible is provided either by inductive (RF) or resistive heating. The growth occurs on thin SiC seeds. The source represents polycrystalline SiC powder charge. The SiC vapor in the growth chamber mainly consists of three species, namely, Si, Si2C, and SiC2, which are diluted by carrier gas, for example, Argon. The SiC source evolution includes both time variation of porosity and granule diameter and graphitization of the powder granules.

SiC epi wafer

SiC Crystal Structure

SiC Crystal has many different crystal structures,which is called polytypes.The most common polytypes of SiC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes are characterized by the stacking sequence of the biatom layers of the SiC structure

sic crystal defects

Most of the defects which were observed in SiC were also observed in other crystalline materials. Like the dislocations, stacking faults (SFs), low angle boundaries (LABs) and twins. Some others appear in materials having the Zing- Blend or the Wurtzite structure, like the IDBs. Micropipes and inclusions from other phases mainly appear in SiC.

SiC crystal application

Many researchers know the general SiC application:III-V Nitride Deposition;Optoelectronic Devices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, We list some detail

material application and advantagement

• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap

Applications:

• GaN epitaxy device
• Optoelectronic device
• High frequency device
• High power device
• High temperature device
• Light emitting diodes