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About SiC Crystal

Silicon carbide (SiC), also known as carborundum /kɑːrbəˈrʌndəm/, is a semiconductor containing silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Synthetic silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Large single crystals of silicon carbide can be grown by the Lely method; they can be cut into gems known as synthetic moissanite. Silicon carbide with high surface area can be produced from SiO2 contained in plant material.

Applications of SiC Crystal Substrates and Wafers

Silicon carbide (SiC) crytsals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength optoelectronic, high temperature, radiation resistant applciations. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates.

III-V Nitride Deposition

GaN, AlxGa1-xN and InyGa1-yN epitaxial layers on SiC substrate or sapphire substrate.

Gallium Nitride Epitaxy on SiC Templates are used to fabricate blue light emitting diodes (blue LED) and and nearly solar blind UV photodetectors

Optoelectronic Devices

SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.

SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions.

High Power Devices

SiC has the following properties:

Wide Energy Bandgap

High electrical breakdown field

High saturation drift velocity

High thermal conductivity

SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transitors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability.

SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can theoretically operate at higher power densities than either GaAs or Si. Higher thermal conductivity combined with wide bandgap and high critical field give SiC semiconductors an advantage when high power is a key desirable device feature.

Currently silicon carbide (SiC) is widely used for high power MMICapplications. SiC is also used as a substrate for epitaxial growth of GaN for even higher power MMIC devices

High Temperature Devices

Because SiC has a high thermal conductivity, SiC dissipates heat more rapidly than other semiconductor materials. This enables SiC devices to be operated at extremely high power levels and still dissipate the large amounts of excess heat generated from the devices.

High Frequency Power Devices

SiC-based microwave electronics are used for wireless communications and rad

2. substrates size

Other size

2 inch Diameter 4H Silicon Carbide Substrate Specifications

SUBSTRATE PROPERTY	Production Grade	Research Grade	Dummy Grade
Diameter	50.8 mm ±0.38 mm
Surface Orientation	{0001} ±0.2°
Primary Flat Orientation	<11-20> ± 5.0 ̊
Secondary Flat Orientation	90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up
Primary Flat Length	16.0 mm ±1.65 mm
Secondary Flat Length	8.0 mm ±1.65 mm
Wafer Edge	Chamfer
Micropipe Density	≤5 micropipes/ cm2	≤10 micropipes/ cm2	≤50 micropipes/ cm2
Polytype areas by high-intensity light	None permitted		≤10% area
Resistivity	≥1E7 Ω·cm		(area 75%)≥1E7 Ω·cm
Thickness	350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV	≤10 μm		≤15 μm
Bow(absolute value)	≤10 μm		≤15 μm
Warp	≤25 μm
Surface Finish	Double Side Polish, Si Face CMP(chemical polishing)
Surface Roughness	CMP Si Face Ra≤0.5 nm		N/A
Cracks by high-intensity light	None permitted
Edge chips/indents by diffuse lighting	None permitted	Qty.2 <1.0 mm width and depth	Qty.2 <1.0 mm width and depth
Total usable area	≥90%	≥80%	N/A

3.pictures