China Categories
customized Thickness 1.5mm 4" 4H-N sic Crystal as-cut blank Wafers
Ask Latest Price
Brand Name:zmkj
Model Number:4H-N, 4inch
Price:by required
Supply Ability:100pcs/months
Delivery Time:10-20days
Company Data
Verified Supplier
Contact Person
Wang
Business Type:
Manufacturer Agent Importer Exporter Trading Company
Officials:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Quality:
Quality Certifitation Available
Visit Website
Product Details
Company Profile
Product Details
4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device,
customized thickness 4inch 4H-N silicon carbide crystal sic wafers for 4inch seed crystal grade;
Silicon Carbide SiC crystal substrate wafer carborundum
SILICON CARBIDE MATERIAL PROPERTIES
| Product Name: | Silicon carbide (SiC) crystal substrate | ||||||||||||||||||||||||
| Product Description: | 2-6inch | ||||||||||||||||||||||||
| Technical parameters: |
| ||||||||||||||||||||||||
| Specifications: | 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2" x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw, Ra <10A | ||||||||||||||||||||||||
| Standard Packaging: | 1000 clean room, 100 clean bag or single box packaging |
Application of silicon carbide in power device industry
Compared with silicon (Si) devices, silicon carbide (SiC) power
devices can effectively achieve high efficiency, miniaturization
and light weight of power electronic systems. The energy loss of
silicon carbide power devices is only 50% of that of Si devices,
the heat generation is only 50% of that of silicon devices, and it
has a higher current density. At the same power level, the volume
of silicon carbide power modules is significantly smaller than that
of silicon power modules. Taking the intelligent power module IPM
as an example, using silicon carbide power devices, the module
volume can be reduced to 1/3 to 2/3 of silicon power modules.
There are 3 types of silicon carbide power diodes: Schottky diodes
(SBD), PIN diodes and junction barrier control Schottky diodes
(JBS). Due to the Schottky barrier, SBD has a lower junction
barrier height, so SBD has the advantage of low forward voltage.
The emergence of silicon carbide SBD increased the application
range of SBD from 250V to 1200V. At the same time, its high
temperature characteristics are good, from room temperature to
175°C limited by the shell, the reverse leakage current hardly
increases. In the application field of rectifiers above 3kV,
silicon carbide PiN and silicon carbide JBS diodes have attracted
attention due to their higher breakdown voltage, faster switching
speed, smaller volume and lighter weight than silicon rectifiers.
Silicon carbide power MOSFET devices have ideal gate resistance,
high-speed switching performance, low on-resistance and high
stability. It is the preferred device in the field of power devices
below 300V. It is reported that a silicon carbide MOSFET with a
blocking voltage of 10kV has been successfully developed.
Researchers believe that silicon carbide MOSFET will occupy an
advantageous position in the field of 3kV to 5kV.
Silicon carbide insulated gate bipolar transistors (SiC BJT, SiC
IGBT) and silicon carbide thyristors (SiC Thyristor), silicon
carbide P-type IGBT devices with a blocking voltage of 12kV have
good forward current capability. The on-resistance of silicon
carbide IGBT devices can be compared with unipolar silicon carbide
power devices. Compared with Si bipolar transistors, SiC bipolar
transistors have 20-50 times lower switching losses and lower
conduction voltage drop. Silicon carbide BJT is mainly divided into
epitaxial emitter and ion implanted emitter BJT, and the typical
current gain is between 10-50.
Performance Unit Silicon Si Silicon Carbide SiC Gallium Nitride GaN
Band gap eV 1.12 3.26 3.41
Breakdown electric field MV/cm 0.23 2.2 3.3
Electron mobility cm^2/Vs 1400 950 1500
Drift speed 10^7 cm/s 1 2.7 2.5
Thermal conductivity W/cmK 1.5 3.8 1.3
2. substrates size of standard
4 inch diameter Silicon Carbide (SiC) Substrate Specification | |||||||||
| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | |||||
| Diameter | 100.0 mm±0.5 mm | ||||||||
| Thickness | 350 μm±25μm (200-2000um thickness also is ok) | ||||||||
| Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N | ||||||||
| Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 | |||||
| Resistivity | 4H-N | 0.015~0.028 Ω•cm | |||||||
| 6H-N | 0.02~0.1 Ω•cm | ||||||||
| 4/6H-SI | ≥1E5 Ω·cm | ||||||||
| Primary Flat and length | {10-10}±5.0° ,32.5 mm±2.0 mm | ||||||||
| Secondary Flat Length | 18.0mm±2.0 mm | ||||||||
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||||||||
| Edge exclusion | 3 mm | ||||||||
| TTV/Bow /Warp | ≤15μm /≤25μm /≤40μm | ||||||||
| Roughness | Polish Ra≤1 nm ,CMP Ra≤0.5 nm | ||||||||
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | ||||||
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | ||||||
| Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | ||||||
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | ||||||
| edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | ||||||
| Contamination by high intensity light | None | ||||||||
Sic wafer ＆ ingots 2-6inch and other customized size also can be provided.
3.Products detail display
Delivery ＆ Package
FAQ
Q1. Is your company a factory or trade company?
We are the factory and we also can do export ourself.
Q2.Is you company only work with sic business?
yes; however we don‘t grow the sic crystal by self.
Q3. Could you supply sample?
Yes,we can supply sapphire sample according to customer's requirement.
Q4. Do you have any stock of sic wafers ?
we usually keep some standard size sic wafers from 2-6inch wafers in stock.
Q5.Where is your company located?
Our company located in shanghai ,China.
Q6. How long will take to get the products?
Generally it will take 3~4 weeks to process.It is depend on the quantity and the size of the products.
Company Profile
SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of
Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
We specialize in processing a varity of materials into
wafers, substrates and custiomized optical glass parts.components
widely used in electronics, optics, optoelectronics and many other
fields. We also have been working closely with many domestic and
oversea universities, research institutions and companies, provide
customized products and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all
customers by our good reputatiaons.
Send your message to this supplier
You May Like
High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon Carbide Substrate
4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material
2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device
dummy production Research Grade Silicon Carbide high purity 4h-semi un-doped transparent sic Wafer
3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics
Semi - Insulating Silicon Carbide Substrate , Sic Wafer 4H High Purity
Dummy Grade 6Inch Sic Substrate Wafer Dia150mm 4H-N 500mm Thickness
Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2
high thermal conductivity resistivity Sic Optical Block Lens for quantum optics
5x40mm Customized shape sic Crystal wafers 4H-N Sic Substrates chips
HPSI 4H-SEMI Transparent Colorless Customized SIC Lens
Inquiry Cart
0