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3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics

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Buy cheap 3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics from wholesalers
  • Buy cheap 3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics from wholesalers
  • Buy cheap 3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics from wholesalers

3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics

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Brand Name:zmkj
Model Number:4inch--semi high purity
Price:by required
Supply Ability:100pcs/months
Delivery Time:15days
Company Data
Verified Supplier
Contact Person Wang
Business Type: Manufacturer Agent Importer Exporter Trading Company
Officials: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Quality: Quality Certifitation Available
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Product Details Company Profile
Product Details

3inch sic wafer,4H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​


Application areas


1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET


2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED


advantagement

• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap


Silicon Carbide SiC crystal substrate wafer carborundum

SILICON CARBIDE MATERIAL PROPERTIES


Property4H-SiC, Single Crystal6H-SiC, Single Crystal
Lattice Parametersa=3.076 Å c=10.053 Åa=3.073 Å c=15.117 Å
Stacking SequenceABCBABCACB
Mohs Hardness≈9.2≈9.2
Density3.21 g/cm33.21 g/cm3
Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constantc~9.66c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K

Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K

Band-gap3.23 eV3.02 eV
Break-Down Electrical Field3-5×106V/cm3-5×106V/cm
Saturation Drift Velocity2.0×105m/s2.0×105m/s

2. substrates size of standard


3 inch Diameter 4H Silicon Carbide Substrate Specifications
SUBSTRATE PROPERTYUltra GradeProduction GradeResearch GradeDummy Grade
Diameter76.2 mm ±0.38 mm
Surface Orientationon-axis: {0001} ± 0.2°; off-axis: 4°toward <11-20> ± 0.5°
Primary Flat Orientation<11-20> ± 5.0 ̊
Secondary Flat Orientation90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up
Primary Flat Length22.0 mm ± 2.0 mm
Secondary Flat Length11.0 mm ± 1.5mm
Wafer EdgeChamfer
Micropipe Density≤1 micropipes/ cm2≤5 micropipes/ cm2≤10 micropipes/ cm2≤50 micropipes/ cm2
Polytype areas by high-intensity lightNone permitted≤10% area
Resistivity0.015 Ω·cm~0.028 Ω·cm(area 75%)0.015Ω·cm~0.028 Ω·cm
Thickness350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV≤10 μm≤15 μm
Bow(absolute value)≤15 μm≤25 μm
Warp≤35 μm

3.sample

3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics


FAQ:

Q: What's the way of shipping and cost and pay term ?

A:(1) We accept100% T/T In advance by DHL, Fedex, EMS etc.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement.


Q: What's your MOQ?

A: (1) For inventory, the MOQ is 2pcs.

(2) For customized products, the MOQ is 25pcs up.


Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and shape, size based on your needs.


Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.


Company Profile

SHANGHAI FAMOUS TRADE CO.,LTD

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
   We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects.
    It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.
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