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2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device
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Brand Name:zmkj
Model Number:4inch--N,4H-semi
Price:by required
Delivery Time:10-20days
Supply Ability:100pcs/months
Company Data
Verified Supplier
Contact Person
Wang
Business Type:
Manufacturer Agent Importer Exporter Trading Company
Officials:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Quality:
Quality Certifitation Available
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Product Details
Company Profile
Product Details
4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device,
Application areas
1 high frequency and high power electronic devices Schottky diodes,
JFET, BJT, PiN, diodes, IGBT, MOSFET
2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
Advantagement
• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap
Silicon Carbide SiC crystal substrate wafer carborundum
SILICON CARBIDE MATERIAL PROPERTIES
| Product Name: | Silicon carbide (SiC) crystal substrate | ||||||||||||||||||||||||
| Product Description: | 2-6inch | ||||||||||||||||||||||||
| Technical parameters: |
| ||||||||||||||||||||||||
| Specifications: | 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2" x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw, Ra <10A | ||||||||||||||||||||||||
| Standard Packaging: | 1000 clean room, 100 clean bag or single box packaging |
2. substrates size of standard
4 inch diameter Silicon Carbide (SiC) Substrate Specification | |||||||||
| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | |||||
| Diameter | 100.0 mm±0.5 mm | ||||||||
| Thickness | 350 μm±25μm (200-500um thickness also is ok) | ||||||||
| Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI | ||||||||
| Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 | |||||
| Resistivity | 4H-N | 0.015~0.028 Ω•cm | |||||||
| 6H-N | 0.02~0.1 Ω•cm | ||||||||
| 4/6H-SI | ≥1E5 Ω·cm | ||||||||
| Primary Flat and length | {10-10}±5.0° ,32.5 mm±2.0 mm | ||||||||
| Secondary Flat Length | 18.0mm±2.0 mm | ||||||||
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||||||||
| Edge exclusion | 3 mm | ||||||||
| TTV/Bow /Warp | ≤15μm /≤25μm /≤40μm | ||||||||
| Roughness | Polish Ra≤1 nm ,CMP Ra≤0.5 nm | ||||||||
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | ||||||
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | ||||||
| Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | ||||||
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | ||||||
| edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | ||||||
| Contamination by high intensity light | None | ||||||||
Sic wafer ＆ ingots 2-6inch and other customized size also can be provided.
3.Pictures of delivery Products before
Delivery ＆ Package
Company Profile
SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of
Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
We specialize in processing a varity of materials into
wafers, substrates and custiomized optical glass parts.components
widely used in electronics, optics, optoelectronics and many other
fields. We also have been working closely with many domestic and
oversea universities, research institutions and companies, provide
customized products and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all
customers by our good reputatiaons.
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