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Brand Name:zmkj
Model Number:high purity un-doped 4h-semi
Price:by required
Supply Ability:100pcs/months
Delivery Time:10-20days
Company Data
Verified Supplier
Contact Person
Wang
Business Type:
Manufacturer Agent Importer Exporter Trading Company
Officials:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Quality:
Quality Certifitation Available
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Company Profile
Product Details
High purity un-doped 4inch 4H-Semi silicon carbide sic wafers for optical lens or device
Silicon Carbide SiC crystal substrate wafer carborundum
SILICON CARBIDE MATERIAL PROPERTIES
| Product Name: | Silicon carbide (SiC) crystal substrate | ||||||||||||||||||||||||
| Product Description: | 2-6inch | ||||||||||||||||||||||||
| Technical parameters: |
| ||||||||||||||||||||||||
| Specifications: | 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2" x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw, Ra <10A | ||||||||||||||||||||||||
| Standard Packaging: | 1000 clean room, 100 clean bag or single box packaging |
Application of silicon carbide in power device industry
Performance Unit Silicon Si Silicon Carbide SiC Gallium Nitride GaN
Band gap eV 1.12 3.26 3.41
Breakdown electric field MV/cm 0.23 2.2 3.3
Electron mobility cm^2/Vs 1400 950 1500
Drift speed 10^7 cm/s 1 2.7 2.5
Thermal conductivity W/cmK 1.5 3.8 1.3
SiC crystal is an important wide-bandgap semiconductor material.
Because of its high thermal conductivity, high electron drift rate,
high breakdown field strength and stable physical and chemical
properties, it is widely used in high temperature, In high
frequency and high power electronic devices. There are more than
200 types of SiC crystals that have been discovered so far. Among
them, 4H- and 6H-SiC crystals have been commercially supplied. They
all belong to the 6mm point group and have a second-order nonlinear
optical effect. Semi-insulating SiC crystals are visible and
medium. The infrared band has a higher transmittance. Therefore,
optoelectronic devices based on SiC crystals are very suitable for
applications in extreme environments such as high temperature and
high pressure. Semi-insulating 4H-SiC crystal has been proved to be
a new type of mid-infrared nonlinear optical crystal. Compared with
commonly used mid-infrared nonlinear optical crystals, SiC crystal
has a wide band gap (3.2eV) due to the crystal. , High thermal
conductivity (490W/m·K) and large bond energy (5eV) between Si-C,
making SiC crystal have a high laser damage threshold. Therefore,
semi-insulating 4H-SiC crystal as a nonlinear frequency conversion
crystal has obvious advantages in outputting high-power
mid-infrared laser. Thus, in the field of high-power lasers, SiC
crystal is a nonlinear optical crystal with broad application
prospects. However, the current research based on the nonlinear
properties of SiC crystals and related applications is not yet
complete. This work takes the nonlinear optical properties of 4H-
and 6H-SiC crystals as the main research content, and aims to solve
some basic problems of SiC crystals in terms of nonlinear optical
properties, so as to promote the application of SiC crystals in the
field of nonlinear optics. A series of related work has been
carried out theoretically and experimentally. The main research
results are as follows: First, the basic nonlinear optical
properties of SiC crystals are studied. The variable temperature
refraction of 4H- and 6H-SiC crystals in the visible and
mid-infrared bands (404.7nm～2325.4nm) was tested, and the Sellmier
equation of variable temperature refractive index was fitted. The
single oscillator model theory was used to calculate the dispersion
of the thermo-optical coefficient. A theoretical explanation is
given; the influence of the thermo-optic effect on the phase
matching of 4H- and 6H-SiC crystals is studied. The results show
that the phase matching of 4H-SiC crystals is not affected by
temperature, while 6H-SiC crystals still cannot achieve temperature
phase matching. condition. In addition, the frequency doubling
factor of semi-insulating 4H-SiC crystal was tested by the Maker
fringe method. Second, the femtosecond optical parameter
generation and amplification performance of 4H-SiC crystal is
studied. The phase matching, group velocity matching, best
non-collinear angle and best crystal length of 4H-SiC crystal
pumped by 800nm femtosecond laser are theoretically analyzed.
Using the femtosecond laser with a wavelength of 800nm output by
the Ti:Sapphire laser as the pump source, using two-stage optical
parametric amplification technology, using a 3.1mm thick
semi-insulating 4H-SiC crystal as a nonlinear optical crystal,
under 90° phase matching, For the first time, a mid-infrared laser
with a center wavelength of 3750nm, a single pulse energy up to
17μJ, and a pulse width of 70fs was obtained experimentally. The
532nm femtosecond laser is used as the pump light, and the SiC
crystal is 90° phase-matched to generate signal light with an
output center wavelength of 603nm through optical parameters.
Third, the spectral broadening performance of semi-insulating
4H-SiC crystal as a nonlinear optical medium is studied. The
experimental results show that the half-maximum width of the
broadened spectrum increases with the crystal length and the laser
power density incident on the crystal. The linear increase can be
explained by the principle of self-phase modulation, which is
mainly caused by the difference of the refractive index of the
crystal with the intensity of the incident light. At the same time,
it is analyzed that in the femtosecond time scale, the nonlinear
refractive index of SiC crystal may be mainly attributed to the
bound electrons in the crystal and the free electrons in the
conduction band; and the z-scan technology is used to preliminarily
study the SiC crystal under 532nm laser. Non-linear absorption and
non-linear refractive index performance.
2. Un-doped High purity sparent 4H-SEMI SIC INGOTS
Sic wafer ＆ ingots 2-6inch and other customized size also can be
provided.
3.Products detail display
Delivery ＆ Package
FAQ
- Q1. Is your company a factory or trade company?
- We are the factory and we also can do export ourself.
- Q2.Is you company only work with sic business?
- yes; however we don‘t grow the sic crystal by self.
- Q3. Could you supply sample?
- Yes,we can supply sapphire sample according to customer's requirement
- Q4. Do you have any stock of sic wafers ?
- we usually keep some standard size sic wafers from 2-6inch wafers in stock
- Q5.Where is your company located.
- Our company located in shanghai ,China.
- Q6. How long will take to get the products.
- Generally it will take 3~4 weeks to process.It is depend on the and the size of the products.
Company Profile
SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of
Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
We specialize in processing a varity of materials into
wafers, substrates and custiomized optical glass parts.components
widely used in electronics, optics, optoelectronics and many other
fields. We also have been working closely with many domestic and
oversea universities, research institutions and companies, provide
customized products and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all
customers by our good reputatiaons.
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